 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com * Pb-Free Packages are Available Typical Applications 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mW N-Channel D * * * * Power Supplies Converters Power Motor Controls Bridge Circuits G S MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 MW) Gate-to-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 75 A, VDS = 60 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 60 60 "20 "30 75 50 225 214 1.4 2.4 -55 to +175 844 Adc Apk W W/C W C mJ 4 Unit Vdc Vdc Vdc 4 MARKING DIAGRAMS 4 Drain TO-220 CASE 221A STYLE 5 1 Gate 75N06 AYWW 1 2 3 3 Source 2 Drain 4 Drain TJ, Tstg EAS C/W RqJC RqJA TL 0.7 62.5 260 C 2 3 D2PAK CASE 418B STYLE 2 75N06 AYWW 2 1 3 Drain Gate Source 75N06 A Y WW = Device Code = Assembly Location = Year = Work Week Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 2 Publication Order Number: NTP75N06/D NTP75N06, NTB75N06 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 1) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 1) (VGS = 10 Vdc, ID = 37.5 Adc) Static Drain-to-Source On-Voltage (Note 1) (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 37.5 Adc, TJ = 150C) Forward Transconductance (Note 1) (VDS = 15 Vdc, ID = 37.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 75 Adc, Vd Ad VGS = 10 Vdc) (Note 1) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time (IS = 75 Adc, VGS = 0 Vdc, Ad Vd dIS/dt = 100 A/ms) (Note 1) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperatures. (IS = 75 Adc, VGS = 0 Vdc) (Note 1) (IS = 75 Adc, VGS = 0 Vdc, TJ = 150C) VSD trr ta tb QRR - - - - - - 1.0 0.9 77 49 28 0.16 1.1 - - - - - mC Vdc ns (VDD = 30 Vdc, ID = 75 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 1) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 16 112 90 100 92 14 44 25 155 125 140 130 - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vd Vd f = 1.0 MHz) Ciss Coss Crss - - - 3220 1020 234 4510 1430 330 pF VGS(th) 2.0 - RDS(on) - VDS(on) - - gFS - 0.72 0.63 40.2 0.86 - - mhos 8.2 9.5 Vdc 2.8 8.0 4.0 - Vdc mV/C mW V(BR)DSS 60 - IDSS - - IGSS - - - - 10 100 100 nAdc 71 73 - - Vdc mV/C mAdc Symbol Min Typ Max Unit http://onsemi.com 2 NTP75N06, NTB75N06 160 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 140 120 100 80 VGS = 9 V 60 40 20 0 0 1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS = 5 V VGS = 4.5 V VGS = 7 V VGS = 8 V VGS = 5.5 V VGS = 10 V VGS = 6.5 V VGS = 6 V 160 140 120 100 80 60 40 20 0 2.5 TJ = 25C TJ = 100C 3 3.5 4 4.5 TJ = -55C 5 5.5 6 6.5 7 VDS w 10 V VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.015 VGS = 10 V 0.013 0.011 0.009 0.007 TJ = -55C 0.005 0.003 0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPS) TJ = 25C TJ = 100C 0.015 VGS = 15 V 0.013 TJ = 100C 0.011 0.009 TJ = 25C 0.007 TJ = -55C 0.005 0.003 0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Gate-to-Source Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 175 0 ID = 37.5 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1000 TJ = 125C 100 TJ = 100C 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTP75N06, NTB75N06 10000 VDS = 0 V C, CAPACITANCE (pF) 8000 Ciss 6000 Crss 4000 Ciss Coss 2000 Crss 0 10 5 VGS 0 VDS VGS, GATE-TO-SOURCE VOLTAGE (V) 12 10 8 Q1 6 4 2 0 ID = 75 A TJ = 25C 0 10 20 30 40 50 60 70 80 90 100 Q2 QT VGS VGS = 0 V TJ = 25C 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 0.6 VGS = 0 V TJ = 25C t, TIME (ns) 100 tf tr td(off) 10 td(on) VDS = 30 V ID = 75 A VGS = 5 V 1 10 RG, GATE RESISTANCE (W) 100 1 0.64 0.68 0.72 0.76 0.8 0.84 0.86 0.92 0.96 1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variations vs. Gate Resistance 1000 ID, DRAIN CURRENT (AMPS) EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 Figure 10. Diode Forward Voltage vs. Current VGS = 20 V SINGLE PULSE TC = 25C 10 ms ID = 75 A 800 100 100 ms 1 ms 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 1 10 10 ms dc 600 400 200 100 0 25 50 75 100 125 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTP75N06, NTB75N06 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 t1 t2 DUTY CYCLE, D = t1/t2 0.01 t, TIME (ms) 0.1 P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0 10 Figure 13. Thermal Response ORDERING INFORMATION Device NTP75N06 NTP75N06G NTB75N06 NTB75N06G NTB75N06T4 NTB75N06T4G Package TO-220 TO-220 (Pb-Free) D2PAK D2PAK (Pb-Free) D2PAK D2PAK (Pb-Free) 800 Tape & Reel 800 Tape & Reel Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTP75N06, NTB75N06 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 NTP75N06, NTB75N06 PACKAGE DIMENSIONS D2PAK CASE 418B-04 ISSUE J C E -B- 4 DIM A B C D E F G H J K L M N P R S V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W A 1 2 3 S -T- SEATING PLANE K G D H 3 PL M W J 0.13 (0.005) TB M VARIABLE CONFIGURATION ZONE L M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN R N U L P L M M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTP75N06, NTB75N06 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTP75N06/D |
Price & Availability of NTP75N06
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |